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SPP3401B の電気的特性と機能
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SPP3401BのメーカーはSYNC POWERです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPP3401B |
| 部品説明 P-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPP3401Bダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPP3401B
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3401B is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V
-30V/-3.2A,RDS(ON)= 90mΩ@VGS=-4.5V
-30V/-1.2A,RDS(ON)= 115mΩ@VGS=-2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
www.DataSheet4U.com
PART MARKING
2009 / 01 / 05 Ver.1
Page 1
1 Page
SPP3401B
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=55℃
ID(on) VDS≦-5V,VGS=-10V
RDS(on)
gfs
VSD
VGS=- 10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VGS=-2.5V,ID=-1.2A
VDS=-5.0V,ID=-4.0A
IS=-1.0A,VGS=0V
-30 V
-0.4 -1.0
±100 nA
-1
-10 uA
-10 A
0.062
0.080
0.107
10
-0.8
0.070
0.090
0.115
-1.2
Ω
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-4.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
10 18
1.6 nC
3.0
450
95 pF
55
8 18
8 18 ns
25 50
25 35
2009 / 01 / 05 Ver.1
Page 3
3Pages
SPP3401B
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2009 / 01 / 05 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPP3401B データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPP3401 | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP3401B | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP3401D | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP3401DS23RG | P-Channel Enhancement Mode MOSFET | SYNC POWER |