|
SPP4925B の電気的特性と機能
|
SPP4925BのメーカーはSYNC POWERです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 SPP4925B |
| 部品説明 P-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPP4925Bダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
No Preview Available ! |
SPP4925B
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4925B is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-7.2A,RDS(ON)= 24mΩ@VGS=- 10V
-30V/-5.6A,RDS(ON)= 30mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2009/03/20 Ver.1
Page 1
1 Page
SPP4925B
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th)
IGSS
IDSS
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-9.2A
VGS=-4.5V,ID=-7.0A
gfs VDS=-10V,ID=-9.0A
VSD IS=-2.3A,VGS =0V
-30 V
-0.7 -1.6
±100 nA
-1
-5 uA
-40 A
0.020
0.024
24
0.024
0.030
Ω
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -9.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
20 30
3.5 nC
4.8
1850
450
pF
335
20 30
20 30 nS
75 110
40 80
2009/03/20 Ver.1
Page 3
3Pages
SPP4925B
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2009/03/20 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPP4925B データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| SPP4925 | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4925B | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4925S8RG | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4925S8TG | P-Channel Enhancement Mode MOSFET | SYNC POWER |