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SPP47N10 の電気的特性と機能
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SPP47N10のメーカーはInfineon Technologies AGです、この部品の機能は「SIPMOS Power-Transistor」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPP47N10 |
| 部品説明 SIPMOS Power-Transistor |
| メーカ Infineon Technologies AG |
ロゴ |
このページの下部にプレビューとSPP47N10ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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Preliminary data
SPI47N10
SPP47N10,SPB47N10
SIPMOS=Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS 100 V
RDS(on) 33 m
ID 47 A
P-TO263-3-2
P-TO220-3-1
Type
SPP47N10
SPB47N10
SPI47N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4183
Q67040-S4173
tbd
Marking
47N10
47N10
47N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
www.DaCtaoShneteint4uU.ocoums drain current
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=47 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=47A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Page 1
Value
47
33
188
Unit
A
400 mJ
17.5
6
kV/µs
±20 V
175 W
-55... +175
55/175/56
°C
2001-08-24
1 Page
Preliminary data
SPI47N10
SPP47N10,SPB47N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max ,
13
ID =33A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V, VDS=25V,
f=1MHz
VDD=50V, VGS=10V,
ID=47A, RG=4.7
-
-
-
-
-
-
-
Values
typ. max.
26 -
2000
370
190
25
23
63
15
2500
465
240
39
36
99
22.5
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
www.DaGtaaShteeetp4Ula.ctoemau voltage
Qgs VDD=80V, ID=47A
Qgd
Qg VDD=80V, ID=47A,
VGS=0 to 10V
V(plateau) VDD=80V, ID=47A
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
Inverse diode direct current,
pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0V, IF=94A
VR=50V, IF=lS,
diF/dt=100A/µs
- 19 28.5 nC
- 29 43.5
- 70 105
- 6.03 - V
- - 47 A
- - 188
- 1.1 1.5 V
- 100 150 ns
- 400 600 nC
Page 3
2001-08-24
3Pages
Preliminary data
SPI47N10
SPP47N10,SPB47N10
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 33 A, VGS = 10 V
130 SPP47N10
m
110
100
90
80
70
60
50
40
30
20
10
0-60
-20
98%
typ
20 60 100
11 Typ. capacitances
C = f (VDS)
www.DaptaaSrhaemet4eUt.ceorm: VGS=0V, f=1 MHz
10 4
140 °C 200
Tj
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 2 mA
5
V
4.4
4
3.6
3.2
2.8 max
2.4
2 typ
1.6
1.2
min
0.8
0.4
0-60 -20 20 60 100 140 V 200
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPP47N10
A
pF
Ciss
10 2
10 3
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Page 6
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
VSD
2001-08-24
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPP47N10 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPP47N10 | SIPMOS Power-Transistor | Infineon Technologies AG |
| SPP47N10L | SIPMOS Power-Transistor | Infineon Technologies AG |