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FGA30N60LSD の電気的特性と機能
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FGA30N60LSDのメーカーはFairchild Semiconductorです、この部品の機能は「MOSFETs and bipolar transistors」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FGA30N60LSD |
| 部品説明 MOSFETs and bipolar transistors |
| メーカ Fairchild Semiconductor |
ロゴ |
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FGA30N60LSD
Features
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
October 2008
tm
General Description
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
www.DataSIChMee(1t)4U.com Pulsed Collector Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 25°C
@ TC = 100°C
PD Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA30N60LSD
600
± 20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
0.92
40
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev. A
1
www.fairchildsemi.com
1 Page
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
VFM IF = 15A
IF = 15A
TC = 25 °C
TC = 125 °C
-
-
IRM VR = 600V
TC = 25 °C
-
trr
IF =1A, di/dt = 100A/µs, VCC = 30V
TC = 25 °C
-
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
-
ta
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
-
tb
TC = 25 °C
-
Qrr
TC = 25 °C
-
Typ.
1.8
1.6
-
-
-
18
13
27.5
Max
2.2
-
100
35
40
-
-
-
Units
V
V
µA
ns
ns
ns
ns
nC
www.DataSheet4U.com
FGA30N60LSD Rev. A
3
www.fairchildsemi.com
3Pages
Typical Performance Characteristics (Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
3000
1000
tf
Figure 14. Turn-On Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
100
tr
100
0
Figure 15.
td(off)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
Turn-Off Characteristics vs.
Collector Current
6000
tf
1000
td(off)
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
www.DataSheet4U.com
100
20 30 40 50 60 70 80
Collector Current, IC [A]
Figure 17.Switching Loss vs Collector Current
100
Eoff
10
1
0.1
10
Eon
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
20 30 40 50 60 70 80
Collector Current, IC [A]
td(on)
10
20 30 40 50 60
Collector Current, IC [A]
Figure 16. Switching Loss vs
Gate Resistance
70
80
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
100 TC = 25oC
TC = 125oC
Eoff
10
Eon
1
5 10 15 20 25 30 35 40 45 50
Gate Resistance, RG [Ω]
Figure 18. Turn-Off Switching
SOA Characteristics
200
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
FGA30N60LSD Rev. A
6
www.fairchildsemi.com
6 Page
合計 : 9 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FGA30N60LSD | MOSFETs and bipolar transistors | Fairchild Semiconductor |