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FDS8638 の電気的特性と機能
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FDS8638のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDS8638 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
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FDS8638
N-Channel PowerTrench® MOSFET
40 V, 18 A, 4.3 mΩ
Features
General Description
March 2009
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
Synchronous Rectifier
Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
40
±20
18
100
541
2.5
1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8638
Device
FDS8638
Package
SO-8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
100
VGS = 10 V
80
VGS = 3.5 V
VGS = 4.5 V
60
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
20
0
0.0
VGS = 3 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4 V
VGS = 4.5 V
20 40 60
ID, DRAIN CURRENT (A)
VGS = 10 V
80 100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 18 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
20
ID = 18 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 150 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
3
www.fairchildsemi.com
3Pages
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
www.DataSheeextp4eUct.ecdomto result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I39
6 www.fairchildsemi.com
6 Page
合計 : 6 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDS8638 | N-Channel MOSFET | Fairchild Semiconductor |