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FDP8443 の電気的特性と機能
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FDP8443のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDP8443 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDP8443ダウンロード（pdfファイル）リンクがあります。 Total 7 pages |
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August 2007
FDP8443
N-Channel PowerTrench® MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 142nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
tm
www.DataSheet4U.com
©2007 Fairchild Semiconductor Corporation
FDP8443 Rev. A
1
www.fairchildsemi.com
1 Page
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics (VGS = 10V)
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/μs
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
Min Typ Max Units
- - 58 ns
- 18.4 -
ns
- 17.9 -
ns
- 55 - ns
- 13.5 -
ns
- - 109 ns
-
-
0.8 1.25
0.8 1.0
V
- 42 55 ns
- 48 62 nC
www.DataSheet4U.com
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8443 Rev. A
3 www.fairchildsemi.com
3Pages
Typical Characteristics
1.2
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.15
ID = 1mA
1.10
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
10000
Ciss
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
www.DataSheet4U.coFmigure 13. Capacitance vs Drain to Source
Voltage
10
ID = 35A
8
6
VDD = 15V
VDD = 20V
VDD = 25V
4
2
0
0 20 40 60 80 100 120 140 160
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
FDP8443 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDP8440 | N-Channel MOSFET | Fairchild Semiconductor |
| FDP8441 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| FDP8442 | N-Channel MOSFET | Fairchild Semiconductor |
| FDP8442_F085 | MOSFET ( Transistor ) | Fairchild Semiconductor |