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FDPF19N40 の電気的特性と機能
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FDPF19N40のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDPF19N40 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDP19N40 / FDPF19N40
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
• RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
• Low Gate Charge ( Typ. 32nC)
• Low Crss ( Typ. 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
October
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP19N40 FDPF19N40
400
±30
19 19*
11.4 11.4*
76 76*
542
19
21.5
15
215 40
1.65 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP19N40
0.6
0.5
62.5
FDPF19N40
3.0
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP19N40 / FDPF19N40 Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
40 VGS = 15.0V
10.0V
8.0 V
10 7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.03
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.40
0.35
0.30
0.25
0.20
www.DataSheet4U.com
0.15
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
3500
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
2000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1500
Coss
1000
500
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
50
10 150oC
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
150oC
10 25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.2 0.6 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 200V
8 VDS = 320V
6
4
2
*Note: ID = 19A
0
0 5 10 15 20 25 30 35
Qg, Total Gate Charge [nC]
FDP19N40 / FDPF19N40 Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDP19N40 / FDPF19N40 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 9 ページ |
| PDF ダウンロード [ FDPF19N40 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDPF19N40 | N-Channel MOSFET | Fairchild Semiconductor |