|
K3435 の電気的特性と機能
|
K3435のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK3435」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 K3435 |
| 部品説明 MOSFET ( Transistor ) - 2SK3435 |
| メーカ NEC |
ロゴ |
このページの下部にプレビューとK3435ダウンロード（pdfファイル）リンクがあります。 Total 4 pages |
No Preview Available ! |
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
5 • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
2SK3435-S
TO-220AB
TO-262
2SK3435-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
60
±20
±80
±320
84
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
5 Single Avalanche Current Note2
www.DataSheet4U.com
5 Single Avalanche Energy Note2
Tstg –55 to +150
IAS 31
EAS 96
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14604EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
1 Page
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
2SK3435
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4.8 MAX.
(10) 1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-220SMD (MP-25Z)
(10)
4
4.8 MAX.
1.3±0.2
www.DataSheet4U.com
1.4±0.2
1.0±0.3
(0.5R(0).8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14604EJ1V0DS00
3
3Pages
合計 : 4 ページ |
| PDF ダウンロード [ K3435 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| K3430 | MOSFET ( Transistor ) - 2SK3430 | NEC |
| K3435 | MOSFET ( Transistor ) - 2SK3435 | NEC |