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OMD500 の電気的特性と機能
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OMD500のメーカーはOmnirelです、この部品の機能は「(OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 OMD500 |
| 部品説明 (OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE |
| メーカ Omnirel |
ロゴ |
このページの下部にプレビューとOMD500ダウンロード（pdfファイル）リンクがあります。 Total 4 pages |
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OMD100 OMD400
OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
www.DataSheet4U.com
PART NUMBER
OMD100
OMD200
OMD400
OMD500
VDS
100V
200V
400V
500V
RDS(on)
.08
.11
.35
.43
ID
25A
25A
13A
11A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET 4
FET 3
GS D GS D
DSG GS D
FET 1
FET 3
.260
1.000
SQ.
.187
TYP.
1.520
45°
REF
.150
.500
MIN.
.170 R.
TYP.
.156 DIA.
TYP.
.040 LEAD
DIA.
.625
.125
(10 PLCS)
.050
.270
4 11 R2
Supersedes 1 07 R1
3.1 - 1
1 Page
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD400 (400V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
400 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
15 A VDS 2 VDS(on), VGS = 10 V
2.0 2.8 V VGS = 10 V, ID = 8.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.30 .35
VGS = 10 V, ID = 8.0 A
RDS(on) Static Drain-Source On-State
Resistance1
.60 .70
VGS = 10 V, ID = 8.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
6.0 9.6
2900
450
150
30
40
80
30
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 8.0 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 200 V, ID @ 8.0 A
ns Rg =5.0 W , VGS =10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
Modified MOSPOWER
- 15 A
symbol showing
D
the integral P-N G
- 60 A
Junction rectifier.
S
- 1.6 V TC = 25 C, IS = -15 A, VGS = 0
600 ns TJ = 100 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OMD500 (500V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
500 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
13 A VDS 2 VDS(on), VGS = 10 V
2.1 3.0 V VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.35 0.43
VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
0.66 0.88
VGS = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
6.0 7.2
2600
280
40
30
46
75
31
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 7.0 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 210 V, ID @ 7.0 A
ns Rg = 5.0 W , VGS = 10 V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
Modified MOSPOWER
- 13 A
symbol showing
D
the integral P-N G
- 52 A
Junction rectifier.
S
- 1.4 V TC = 25 C, IS = -13 A, VGS = 0
700 ns TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
3Pages
合計 : 4 ページ |
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| 部品番号 | 部品説明 | メーカ |
| OMD500 | (OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE | Omnirel |