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ST3406 の電気的特性と機能
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ST3406のメーカーはStanson Technologyです、この部品の機能は「N Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 ST3406 |
| 部品説明 N Channel Enhancement Mode MOSFET |
| メーカ Stanson Technology |
ロゴ |
このページの下部にプレビューとST3406ダウンロード（pdfファイル）リンクがあります。 Total 6 pages |
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ST3406
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
z 30V/5.4A, RDS(ON) = 26mΩ(Typ.)
@VGS = 10V
z 30V/4.6A, RDS(ON) = 36mΩ
@VGS = 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
www.DataSheet4U.com
3
A6YA
12
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3406S23RG
SOT-23-3L
A6YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
1 Page
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance
RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
Dynamic
Total Gate Charge
www.DataShGeeat4tUe.-coSmource Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.6A
VDS=4.5V,ID=5.4A
IS=1.7A,VGS=0V
VDS=15V
VGS=10V
ID≣6.7A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
30 V
1.0 3.0 V
±100
1
nA
10 uA
10 A
26
36
33
41
mΩ
12 S
0.8 1.2 V
10 18
1.6
3.1
450
240
38
7 15
10 20
20 40
11 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
3Pages
SOT-23-3L PACKAGE OUTLINE
ST3406
N Channel Enhancement Mode MOSFET
5.4A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
6 Page
合計 : 6 ページ |
| PDF ダウンロード [ ST3406 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| ST3400 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3401 | P Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3402 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3403 | P Channel Enchancement Mode MOSFET | Stanson Technology |