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ST3401 の電気的特性と機能
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ST3401のメーカーはStanson Technologyです、この部品の機能は「P Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 ST3401 |
| 部品説明 P Channel Enhancement Mode MOSFET |
| メーカ Stanson Technology |
ロゴ |
このページの下部にプレビューとST3401ダウンロード（pdfファイル）リンクがあります。 Total 6 pages |
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ST3401
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
ST3401 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
z -30V/-4.0A, RDS(ON) = 45mΩ (Typ.)
@VGS = -10V
z -30V/-3.2A, RDS(ON) = 50mΩ
@VGS = -4.5V
z -30V/-1.2A, RDS(ON) = 60mΩ
@VGS = -2.5V
z Super high density cell design for
Extremely low RDS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-23-3L package design
www.DataSheet4U.com
3
A1YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3401S23RG
SOT-23-3L
A1YA
※ Process Code : A ~ Z ; a ~ z
※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
1 Page
ST3401
P Channel Enhancement Mode MOSFET
-4.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
www.DataTSohteaetl4UG.caotme Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -0.4
-1.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
±100 nA
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
-1
-10 uA
VDS≦-5V,VGS=-4.5V -10
VGS=-10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VGS=-2.5V,ID=-1.2A
45
50
60
VDS=-5V,ID=-4.0V
10
A
mΩ
S
VSD IS=-1.0A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V
VGS=-10V
ID≣-4.0A
VDS=-15V
VGS=0V
F=1MHz
VDS=-15V
VGS=-15V
ID=-1A
RL=6Ω
RG=-10Ω
14 21
1.9
3.7
540
131
105
10 15
15 25
31 50
20 30
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
3Pages
SOT-23-3L PACKAGE OUTLINE
ST3401
P Channel Enhancement Mode MOSFET
-4.0A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
6 Page
合計 : 6 ページ |
| PDF ダウンロード [ ST3401 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| ST3400 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3401 | P Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3402 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3403 | P Channel Enchancement Mode MOSFET | Stanson Technology |