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ST2305A の電気的特性と機能
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ST2305AのメーカーはStanson Technologyです、この部品の機能は「P Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 ST2305A |
| 部品説明 P Channel Enhancement Mode MOSFET |
| メーカ Stanson Technology |
ロゴ |
このページの下部にプレビューとST2305Aダウンロード（pdfファイル）リンクがあります。 Total 6 pages |
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ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.)
@VGS = -4.5V
z -15V/-3.0A, RDS(ON) = 55m-ohm
@VGS = -2.5V
z -15V/-2.0A, RDS(ON)= 90m-ohm
@VGS=-1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
www.DataSheet4U.com
3
05YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2305AS23RG
SOT-23-3L
05YA
※ Process Code : A ~ Z ; a ~ z
※ ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
1 Page
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS VGS=0V,ID=-250uA -15
V
VGS(th) VDS=VGS,ID=-250uA -0.3
-1.5 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
±100 nA
-1
-10 uA
-6
-3
0.045
0.055
0.09
8.5
A
Ω
S
Diode Forward Voltage
www.DataSheDet4yUn.caommic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V
VGS=-4.5V
ID≣-3.5A
VDS=-10V
VGS=0V
F=1MHz
VDD=-10V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
-0.8 -1.2 V
10 12
2
2
485
90
40
10 18
13 22
18 24
15 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
3Pages
SOT-23-3L PACKAGE OUTLINE
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
www.DataSheet4U.com
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
6 Page
合計 : 6 ページ |
| PDF ダウンロード [ ST2305A データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| ST2305 | P Channel Enchancement Mode MOSFET | Stanson Technology |
| ST2305A | P Channel Enhancement Mode MOSFET | Stanson Technology |