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FDMS7692 の電気的特性と機能
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FDMS7692のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMS7692 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDMS7692ダウンロード（pdfファイル）リンクがあります。 Total 7 pages |
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August 2011
FDMS7692
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
Features
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
47
14
50
21
27
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
50
°C/W
Device Marking
FDMS7692
Device
FDMS7692
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
50
40 VGS = 10 V
VGS = 4.5 V
VGS = 4.0 V
30 VGS = 3.5 V
20
10
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.0 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
10
8 VGS = 3.0 V
6
4
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4.0 V
0
VGS = 4. 5 V
VGS = 10 V
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5 ID = 13 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
2
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = 5 V
30
20
10
0
1
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
3
www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
6
www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDMS7692 | N-Channel MOSFET | Fairchild Semiconductor |
| FDMS7692A | N-Channel MOSFET | Fairchild Semiconductor |
| FDMS7694 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| FDMS7698 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |