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FDMS7680 の電気的特性と機能
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FDMS7680のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMS7680 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 mΩ
Features
General Description
April 2009
Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
(Note 1a)
3.7
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
80
VGS = 10 V
60 VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
40
20
0
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
Figure 1. On Region Characteristics
8
7
VGS = 3 V
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
VGS = 3.5 V
4
3 VGS = 4 V
2
1
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5 ID = 14 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
25
PULSE DURATION = 80 µs
ID = 14 A DUTY CYCLE = 0.5% MAX
20
15
10 TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
80
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
VDS = 5 V
40
TJ = 150 oC
TJ = 25 oC
20
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
3
www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
6
www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDMS7680 | N-Channel MOSFET | Fairchild Semiconductor |
| FDMS7682 | MOSFET ( Transistor ) | Fairchild Semiconductor |