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FDMS7658AS の電気的特性と機能
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FDMS7658ASのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMS7658AS |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
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September 2009
FDMS7658AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 1.9 mΩ
Features
General Description
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
100% UIL tested
Synchronous Rectifier for DC/DC Converters
RoHS Compliant
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
Pin 1
S D5
4G
S
SG D 6
3S
Power 56
DDDD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
177
29
150
1.5
162
89
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.4
50
°C/W
Device Marking
FDMS7658AS
Device
FDMS7658AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
150
VGS = 10 V
120 VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
90
VGS = 3 V
60
30
0
0.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
5
PULSE DURATION = 80 µs
4
VGS = 3 V
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2
VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 30 60 90 120
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
150
1.6
ID = 28 A
1.4 VGS = 10 V
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 125 oC
60
TJ = 25 oC
30
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
8
ID = 28 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
6
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
300
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDMS7658AS Rev.C
3 www.fairchildsemi.com
3Pages
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7658AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
30
25
20
di/dt = 300 A/µs
15
10
5
0
-5
0 50 100 150 200
TIME (ns)
Figure 14. FDMS7658AS SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3 TJ = 100 oC
10-4
10-5 TJ = 25 oC
10-6
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
www.DataSheet4U.com
FDMS7658AS Rev.C
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDMS7658AS | N-Channel MOSFET | Fairchild Semiconductor |