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FDMS7650 の電気的特性と機能
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FDMS7650のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMS7650 |
| 部品説明 N-Channel PowerTrench MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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February 2016
FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 267 A, 0.99 mΩ
Features
General Description
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low rDS(on).
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
Applications
OringFET
Synchronous Rectifier
D
D
D
D
D5
4G
G
S
S
S
Pin 1
Top Bottom
Power 56
D6
D7
D8
3S
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 5)
(Note 5)
(Note 1a)
(Note 6)
(Note 3)
(Note 1a)
Ratings
30
±20
267
169
36
1210
544
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS7650
Device
FDMS7650
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted.
200
160
120
80
40
0
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
7
6
VGS = 3 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
3
2 VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 40 80 120 160 200
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
ID = 36 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 36A
6
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
160
VDS = 3 V
120
TJ = 150 oC
80
TJ = 25 oC
40
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
200
100 VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
0.1
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
3
www.fairchildsemi.com
3Pages
6 Page
合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDMS7650 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| FDMS7650DC | N-Channel Dual Cool 56 PowerTrench MOSFET | Fairchild Semiconductor |
| FDMS7656AS | N-Channel MOSFET | Fairchild Semiconductor |
| FDMS7658AS | N-Channel MOSFET | Fairchild Semiconductor |