|
FDMC8296 の電気的特性と機能
|
FDMC8296のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 FDMC8296 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDMC8296ダウンロード（pdfファイル）リンクがあります。 Total 7 pages |
No Preview Available ! |
March 2008
FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0mΩ
tm
Features
General Description
Max rDS(on) = 8.0mΩ at VGS = 10V, ID = 12A
Max rDS(on) = 13.0mΩ at VGS = 4.5V, ID = 10A
High performance trench technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is welll suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Pin 1
D
D
D
D
S
S
S
G
D5
D6
D7
D8
4G
3S
2S
1S
TOP
Power 33
Bottom
www.DataShMeeOt4US.cFoEm T Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
44
12
52
60
27
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
53
°C/W
Device Marking
FDMC8296
Device
FDMC8296
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8296 Rev.B
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = 10V
40 VGS = 4.5V
30 VGS = 4V
VGS = 3.5V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
6
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5%MAX
VGS = 3V
4
3 VGS = 3.5V
VGS = 4V VGS = 4.5V
2
1
VGS = 10V
0
0 10 20 30 40 50
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 12A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
20
TJ = 150oC
TJ = 25oC
10
TJ = -55oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
ID = 12A
30
20
TJ = 125oC
10
0
2
TJ = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
10 VGS = 0V
TJ = 150oC
1
0.1
0.01
TJ = 25oC
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDMC8296 Rev.B
3 www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
www.DataSheet4U.com
FDMC8296 Rev.B
6 www.fairchildsemi.com
6 Page
合計 : 7 ページ |
| PDF ダウンロード [ FDMC8296 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| FDMC8296 | N-Channel MOSFET | Fairchild Semiconductor |