|
FDMC8200 の電気的特性と機能
|
FDMC8200のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 FDMC8200 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDMC8200ダウンロード（pdfファイル）リンクがあります。 Total 11 pages |
No Preview Available ! |
FDMC8200
June 2009
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
Pin 1
D1
D1
D1
G1
D1
D2/S1
S2
S2
S2
G2
VIN
VIN VIN
GHS
VIN
SWITCH
NODE
GND GND GND
GLS
S2 5
S2 6
S2 7
G2 8
Q2
Q1
BOTTOM
BOTTOM
Power 33
www.DataSheet4U.com
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
18 18
23 45
8 1a 12 1b
40
1.9 1a
0.7 1c
40
2.2 1b
0.9 1d
-55 to +150
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
65 1a
180 1c
7.5
55 1b
145 1d
4
4 D1
3 D1
2 D1
1 G1
Units
V
V
A
W
°C
°C/W
Device Marking
FDMC8200
Device
FDMC8200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
1
www.fairchildsemi.com
1 Page
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Volt-
age
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 6 A
VGS = 0 V, IS = 9 A
Q1
IF = 6 A, di/dt = 100 A/s
Q2
IF = 9 A, di/dt = 100 A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
V
13
21
24
34
ns
2.3
5.6
10
12
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a.65 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 180 °C/W when mounted on a
minimum pad of 2 oz copper
d. 145 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
www.DataSh3.eAesta4nUN.-ccohmdevice, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
3
www.fairchildsemi.com
3Pages
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
0.003
10-4
SINGLE PULSE
RθJA = 180 oC/W
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
6
www.fairchildsemi.com
6 Page
合計 : 11 ページ |
| PDF ダウンロード [ FDMC8200 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| FDMC8200 | N-Channel MOSFET | Fairchild Semiconductor |
| FDMC8200S | MOSFET ( Transistor ) | Fairchild Semiconductor |