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FDMC7680 の電気的特性と機能

FDMC7680のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
FDMC7680
部品説明
N-Channel MOSFET
メーカ
Fairchild Semiconductor
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Fairchild Semiconductor ロゴ 




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FDMC7680 Datasheet, FDMC7680 PDF,ピン配置, 機能
July 2009
FDMC7680
N-Channel Power Trench® MOSFET
30 V, 14.8 A, 7.2 m:
Features
General Description
„ Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A
„ Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
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Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
14.8
45
72
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
53
°C/W
Device Marking
FDMC7680
Device
FDMC7680
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
1
www.fairchildsemi.com

1 Page





FDMC7680 pdf, ピン配列
Typical Characteristics TJ = 25 °C unless otherwise noted
45
VGS = 10 V PULSE DURATION = 80 Ps
36 VGS = 6 V DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
27
VGS = 4 V
VGS = 3.5 V
18
9
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
3.5
VGS = 3.5 V
3.0
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
2.5
VGS = 4.5 V
2.0 VGS = 4 V
1.5
1.0
0.5
0
VGS = 6 V
VGS = 10 V
9 18 27 36
ID, DRAIN CURRENT (A)
45
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 14.8 A
VGS = 10 V
1.4
25
ID = 14.8 A
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
20
1.2 15
TJ = 125 oC
1.0 10
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
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45
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
36
VDS = 5 V
27
18
9
0
1
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0 V
10
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
3
www.fairchildsemi.com


3Pages


FDMC7680 電子部品, 半導体
Dimensional Outline and Pad Layout
0.10 C
2X
3.30
A
B
3.30
PIN#1 QUADRANT
TOP VIEW
0.8 MAX
0.10 C
0.08 C 00..0050
SEATING
PLANE
SIDE VIEW
0.10 C
2X
(0.203)
PIN #1 IDENT
(4X)
0.55
0.45
1.150
2.32
2.22
1
0.785
4
0.350
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R0.150
0.299
2.05
1.95
8
0.65
5
1.95
0.40
0.30
(8X)
0.10
0.05
CAB
C
BOTTOM VIEW
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILE NAME : MLP08XREVA
E. LAND PATTERN RECOMMENDATION IS
BASED ON FSC DESIGN ONLY
RECOMMENDED LAND PATTERN
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
6
www.fairchildsemi.com

6 Page

合計 : 7 ページ
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部品番号部品説明メーカ
FDMC7680

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

www.DataSheet.jp     

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