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FDMC6675BZ の電気的特性と機能
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FDMC6675BZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMC6675BZ |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
June 2009
Features
General Description
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-40
-9.5
-32
36
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC6675BZ
Device
FDMC6675BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
32
VGS = -4 V
VGS = -4.5 V
24 VGS = -6 V
VGS = -10 V
16
VGS = -3.5 V
8
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = -3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
VGS = -4 V
VGS = -4.5 V
VGS = -6 V
8 16
-ID, DRAIN CURRENT (A)
VGS = -10 V
24 32
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -9.5 A
VGS = -10 V
1.4
1.2
1.0
50
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
ID = -9.5 A
30
TJ = 125 oC
20
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
www.DataSheet4U.com
32
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
24
VDS = -5 V
16
TJ = 150 oC
TJ = 25 oC
8
TJ = -55 oC
0
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
10
0
2
TJ = 25 oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
100
VGS = 0 V
10
TJ = 150 oC
TJ = 25 oC
0.1
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
3
www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
0.10 C
2X
3.30
A
B
3.30
PIN#1 QUADRANT
TOP VIEW
0.8 MAX
0.10 C
0.08 C 0.05
0.00
SEATING
PLANE
SIDE VIEW
0.10 C
2X
(0.203)
PIN #1 IDENT
www.DataSheet4U.com
(4X)
0.55
0.45
1.150
R0.150
0.299
2.32
2.22
1 0.785 4
0.350
2.05
1.95
8
0.65
5
1.95
0.40
0.30
(8X)
0.10
0.05
CAB
C
BOTTOM VIEW
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILE NAME : MLP08XREVA
E. LAND PATTERN RECOMMENDATION IS
BASED ON FSC DESIGN ONLY
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
6
RECOMMENDED LAND PATTERN
www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDMC6675BZ | N-Channel MOSFET | Fairchild Semiconductor |