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FDMC15N06 の電気的特性と機能
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FDMC15N06のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDMC15N06 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDMC15N06ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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FDMC15N06
N-Channel MOSFET
55V, 15A, 0.090Ω
Features
• RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A
• 100% Avalanche Tested
• RoHS Compliant
July 2009
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Top Bottom
Pin 1
S SG
S
D5
D6
MLP 3.3x3.3
DD
DD
D7
D8
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
www.DataShVeDeStS4U.com
VGSS
ID
IDM
EAS
IAR
EAR
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1a)
(Note 2)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
Ratings
55
±20
15
9
2.4
60
36
15
3.5
35
2.3
-55 to +150
300
Ratings
3.5
53
4G
3S
2S
1S
Units
V
V
A
A
A
mJ
A
mJ
W
W
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDMC15N06 Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 20 V
15 V
10 V
8V
7V
6V
10 5 V
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
0.1 1 5
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
0.10
0.05
VGS = 10V
VGS = 20V
www.DataSheet4U0.c.0o0m
0
*Note: TC = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
800
600
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400 Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
200 Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
50
10
150oC
25oC
-55oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
2345678
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5 2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 11V
VDS = 30V
8 VDS = 44V
6
4
2
0 *Note: ID = 15A
0 2 4 6 8 10 12
Qg, Total Gate Charge [nC]
FDMC15N06 Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D = - -GG- -aa- -tt-ee- - PP- - u-u-ll-ss- ee- - -WP- -e-i-dr-ito-h-d-
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDMC15N06 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDMC15N06 | N-Channel MOSFET | Fairchild Semiconductor |