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FDL100N50F の電気的特性と機能
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FDL100N50FのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDL100N50F |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055Ω
Features
• RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A
• Low gate charge ( Typ. 238nC)
• Low Crss ( Typ. 64pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
May 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G DS
TO-264
FDL Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FDL100N50F
500
±30
100
60
400
5000
100
73.5
20
2500
20
-55 to +150
300
Min.
-
0.1
-
Max.
0.05
-
30
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300 VGS = 15.0 V
10.0 V
100 8.0 V
7.0 V
6.5 V
6.0 V
10
1
0.5
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.07
0.06
0.05
0.04
VGS = 10V
VGS = 20V
www.DataSheet4U0..0c3om
0
*Note: TC = 25oC
50 100 150 200
ID, Drain Current [A]
250
Figure 5. Capacitance Characteristics
30000
25000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
15000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
10000
5000
Crss
0
10-1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
400
100
150oC
25oC
10
-55oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
4 6 8 10
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
8
VDS = 250V
VDS = 400V
6
4
2
0 *Note: ID = 50A
0 50 100 150 200 250
Qg, Total Gate Charge [nC]
FDL100N50F Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D = - -GG- -aa- -tt-ee- - PP- - u-u-ll-ss- ee- - -WP- -e-i-dr-ito-h-d-
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDL100N50F Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDL100N50F | N-Channel MOSFET | Fairchild Semiconductor |