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FDG410NZ の電気的特性と機能
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FDG410NZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDG410NZ |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDG410NZ
Single N-Channel PowerTrench® MOSFET
20 V, 2.2 A, 70 mΩ
March 2009
Features
General Description
Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A
Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A
Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A
Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Fast switching speed
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low rDS(on) and gate charge (Qg) in a small package.
Applications
DC/DC converter
Power management
Load switch
Low gate charge
RoHS Compliant
DS
D
D1
6D
G
D
D
D2
G3
5D
4S
www.DataSheet4U.com
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
2.2
6.0
0.42
0.38
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
300
333
°C/W
Device Marking
.41
Device
FDG410NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 4.5 V
5
4
3
2
VGS = 3.5 V
VGS = 2.5 V
VGS = 1.8 V
VGS = 1.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1
0
0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V
1.5
VGS = 3.5 V VGS = 2.5 V
1.0
0.5
1
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
234
ID, DRAIN CURRENT (A)
VGS = 4.5 V
56
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 2.2 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
6
PULSE DURATION = 80 µs
5 DUTY CYCLE = 0.5% MAX
VDS = 5 V
4
3
2
TJ = 125 oC
TJ = 25 oC
1
TJ = -55 oC
0
0.0 0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
180
PULSE DURATION = 80 µs
160 DUTY CYCLE = 0.5% MAX
140 ID = 1.1 A
120
100
TJ = 125 oC
80
60 TJ = 25 oC
40
1.0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
6
VGS = 0 V
1
TJ = 125 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
3
www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
6
www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDG410NZ | N-Channel MOSFET | Fairchild Semiconductor |