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FDG1024NZ の電気的特性と機能
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FDG1024NZのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDG1024NZ |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 mΩ
Features
Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
HBM ESD protection level >2 kV (Note 3)
Very low level gate drive requirements allowing operation in
3 V circuits (VGS(th) < 1.5 V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
S2
G2
D1
D2
G1
S1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
SC70-6
www.DataShMeeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
1.2
6
0.36
0.30
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
350
415
°C/W
Device Marking
.24
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 4.5 V
5 VGS = 3.5 V
VGS = 2.5 V
4
PULSE DURATION = 80 µs
3 DUTY CYCLE = 0.5% MAX
2 VGS = 1.8 V
1 VGS = 1.5 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V
VGS = 2.5 V
VGS = 3.5 V
1.5
1.0
0.5
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1234
ID, DRAIN CURRENT (A)
VGS = 4.5 V
56
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 1.2 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
6
PULSE DURATION = 80 µs
5 DUTY CYCLE = 0.5% MAX
VDS = 5 V
4
3
TJ = 25 oC
2
TJ = 125 oC
1
TJ = -55 oC
0
0123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
600
PULSE DURATION = 80 µs
500 DUTY CYCLE = 0.5% MAX
ID = 1.2 A
400
300 TJ = 125 oC
200
100 TJ = 25 oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
10
VGS = 0 V
1 TJ = 125 oC
0.1
TJ = 25 oC
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.4
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
3
www.fairchildsemi.com
3Pages
Dimensional Outline and Pad Layout
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
6
www.fairchildsemi.com
6 Page
合計 : 7 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDG1024NZ | N-Channel MOSFET | Fairchild Semiconductor |