|
FDD6796 の電気的特性と機能
|
FDD6796のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 FDD6796 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDD6796ダウンロード（pdfファイル）リンクがあります。 Total 6 pages |
No Preview Available ! |
FDD6796
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
Features
General Description
May 2008
Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A
100% UIL tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D
DT O- P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
40
69
20
100
39
42
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.5
40
°C/W
Device Marking
FDD6796
Device
FDD6796
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6796 Rev.C
1
www.fairchildsemi.com
1 Page
Typical Characteristics TJ = 25 °C unless otherwise noted
100
VGS = 10 V
80 VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
20
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
3.5
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
3.0
VGS = 3.5 V
2.5
2.0 VGS = 4 V
1.5
1.0
0.5
0
20 40 60
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 10 V
80 100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 20 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
www.DataSheet4U.com
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 175 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics
20
PULSE DURATION = 80 µs
ID = 20 A DUTY CYCLE = 0.5% MAX
15
10
TJ = 150 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0 V
10
TJ = 175 oC
1
0.1
TJ = 25 oC
10
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD6796 Rev.C
3 www.fairchildsemi.com
3Pages
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP-SPM™
The Power Franchise®
Power-SPM™
PowerTrench®
tm
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
TinyLogic®
Quiet Series™
TINYOPTO™
RapidConfigure™
TinyPower™
Saving our world 1mW at a time™ TinyPWM™
SmartMax™
TinyWire™
SMART START™
SPM®
µSerDes™
STEALTH™
SuperFET™
UHC®
SuperSOT™-3
Ultra FRFET™
SuperSOT™-6
UniFET™
SuperSOT™-8
VCX™
SuperMOS™
VisualMax™
®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
www.DatFaASIhReCeHt4ILUD.c’SomPRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
FDD6796 Rev. C
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
6 www.fairchildsemi.com
6 Page
合計 : 6 ページ |
| PDF ダウンロード [ FDD6796 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| FDD6796 | N-Channel MOSFET | Fairchild Semiconductor |
| FDD6796A | N-Channel MOSFET | Fairchild Semiconductor |