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FDU5N53 の電気的特性と機能
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FDU5N53のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDU5N53 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDU5N53ダウンロード（pdfファイル）リンクがあります。 Total 9 pages |
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FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.5Ω
Features
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
January 2009
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
D
G
S
D-PAK
FDD Series
G D S I-PAK
FDU Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
FDD5N53/FDU5N53
530
±30
4
2.4
16
256
4
4
4.5
40
0.3
-55 to +150
300
Ratings
1.4
110
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDD5N53/FDU5N53 Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 VGS = 15.0V
10 10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.04
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
2.0 VGS = 10V
1.5 VGS = 20V
www.DataSheet4U.c1o.0m
0
*Note: TJ = 25oC
369
ID, Drain Current [A]
12
Figure 5. Capacitance Characteristics
1000
750
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
250
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
20
10
150oC
25oC
1
-55oC
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
70
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 5A
0
0 4 8 12
Qg, Total Gate Charge [nC]
FDD5N53/FDU5N53 Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDD5N53/FDU5N53 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 9 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDU5N53 | N-Channel MOSFET | Fairchild Semiconductor |