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FDB12N50TM の電気的特性と機能
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FDB12N50TMのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDB12N50TM |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDB12N50TM
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
June 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GS
D2-PAK
FDB Series
GDS
I2-PAK
FDI Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθJA*
Thermal Resistance, Junction to Ambient*
RθJA
Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. A1
1
S
Ratings
500
±30
11.5
6.9
46
456
11.5
16.7
4.5
165
1.33
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Ratings
0.75
40
62.5
Units
oC/W
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10 6.0 V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
1 10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
1.2
1.0
0.8
0.6
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0.4
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
5 10 15
ID, Drain Current [A]
20
25
Figure 5. Capacitance Characteristics
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
1000
500 Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
FDB12N50TM Rev. A1
Figure 2. Transfer Characteristics
40
10
150oC
-55oC
25oC
1
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
68
VGS,Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10 25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.3 0.6 0.9 1.2 1.5 1.8
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 *Note: ID = 11.5A
0 5 10 15 20 25
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
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I SD
(DUT )
V DS
(DUT )
D = - -GG- -aa- -tt-ee- - P-P- u-u-ll-ss- ee- - -WP- -e-i-dr -i to-h-d-
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDB12N50 / FDI12N50 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 9 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDB12N50TM | N-Channel MOSFET | Fairchild Semiconductor |