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FDB12N50F の電気的特性と機能
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FDB12N50FのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDB12N50F |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDB12N50F
N-Channel MOSFET, FRFET
500V, 11.5A, 0.7Ω
Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
November 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
DD
G
S
D2-PAK
TO-263AB
FDB Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
500
±30
11.5
6.9
46
456
11.5
16.5
4.5
165
1.33
-55 to +150
300
Ratings
0.75
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDB12N50F Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 VGS = 10.0 V
8.0 V
10 7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.05
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1 10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.9
0.8
0.7
VGS = 10V
0.6 VGS = 20V
www.DataSheet4U.0c.o5m
0
* Note : TJ = 25oC
6 12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
30
10
150oC
25oC
* Notes :
1. VDS = 20V
2. 250µs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10 25oC
Notes:
1. VGS = 0V
1 2. 250µs Pulse Test
0.0 0.5 1.0 1.5 2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 * Note : ID = 11.5A
0 4 8 12 16 20 24
Qg, Total Gate Charge [nC]
FDB12N50F Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
www.DataSheet4U.com
I SD
(DUT )
V DS
(DUT )
D = - -GG- -aa- -tt-ee- - P-P- u-u-ll-ss- ee- - -WP- -e-i-dr -i to-h-d-
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD
FDB12N50F Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FDB12N50F | N-Channel MOSFET | Fairchild Semiconductor |
| FDB12N50TM | N-Channel MOSFET | Fairchild Semiconductor |
| FDB12N50U | N-Channel MOSFET | Fairchild Semiconductor |