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FDB120N10 の電気的特性と機能
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FDB120N10のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDB120N10 |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FDB120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
• RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
FDB120N10
100
±20
74
52
296
198
6.0
170
1.14
-55 to +175
300
FDB120N10
0.88
62.5
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
3000
1000
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10
1
0.2
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.04
0.03
0.02
0.01
VGS = 10V
VGS = 20V
0.00
0
*Note: TC = 25oC
50 100 150 200 250 300
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
7000
5600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
4200
2800
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
1400
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
500
100
175oC
10
-55oC
25oC
*Notes:
1. VDS = 10V
1 2. 250μs Pulse Test
3456789
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
10
25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
VDS = 50V
8 VDS = 80V
6
4
2
0 *Note: ID =74A
0 20 40 60 80
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
3
www.fairchildsemi.com
3Pages
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. C2
6
www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FDB120N10 | N-Channel MOSFET | Fairchild Semiconductor |