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FDB024N06 の電気的特性と機能
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FDB024N06のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FDB024N06 |
| 部品説明 N-Channel PowerTrench MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFDB024N06ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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July 2008
FDB024N06
N-Channel PowerTrench® MOSFET
60V, 265A, 2.4mΩ
tm
Features
• RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
GS
D2-PAK
FDB Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataShSeyemt4bUo.cl om
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
Drain Current
-
ID -
-
Parameter
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
Ratings
60
±20
265*
190*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
1060
2531
3.5
395
2.6
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.38
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB024N06 Rev. A3
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
5.0 V
10
1
0.01
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
www.DataSheet4U.com
1.0
0
VGS = 20V
*Note: TC = 25oC
100 200 300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
16000
12000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
8000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Crss
0
0.1 1 10
VDS, Drain-Source Voltage [V]
60
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100 175oC
25oC
10 -55oC
1
234567
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
175oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
8
VDS = 30V
VDS = 48V
6
4
2
*Note: ID = 75A
0
0 40 80 120 160 200
Qg, Total Gate Charge [nC]
FDB024N06 Rev. A3
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
www.DataSheet4U.com
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FDB024N06 Rev. A3
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ FDB024N06 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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