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FCP9N60N の電気的特性と機能
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FCP9N60NのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FCP9N60N |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FCP9N60N / FCPF9N60NT
N-Channel MOSFET
600V, 9A, 0.385Ω
Features
• RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Ultra low gate charge ( Typ. Qg = 22nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
August 2009
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 3)
FCP9N60N FCPF9N60NT
600
±30
9.0 9.0*
5.7 5.7*
27 27*
135
3
0.83
100
20
83.3 29.8
0.67 0.24
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP9N60N
1.5
0.5
62.5
FCPF9N60NT
4.2
0.5
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10 6.0 V
5.5 V
5.0 V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.2
1.0
0.8
0.6 VGS = 10V
VGS = 20V
0.4
www.DataSheet4U.com
0.2
0
*Notes: TC = 25oC
5 10 15 20 25
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
Coss
*Notes:
1. VGS = 0V
2. f = 1MHz
2000
1000
0
0.1
Ciss
Crss
1 10 100
VDS, Drain-Source Voltage [V]
600
Figure 2. Transfer Characteristics
60
10
150oC
25oC
-55oC
1
0.1
2
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
46
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
0 *Notes: ID = 4.5A
0 5 10 15 20 25
Qg, Total Gate Charge [nC]
FCP9N60N / FCPF9N60NT Rev. A
3
www.fairchildsemi.com
3Pages
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FCP9N60N / FCPF9N60NT Rev. A
6
www.fairchildsemi.com
6 Page
合計 : 10 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FCP9N60N | N-Channel MOSFET | Fairchild Semiconductor |