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FCPF13N60NT の電気的特性と機能
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FCPF13N60NTのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FCPF13N60NT |
| 部品説明 N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
このページの下部にプレビューとFCPF13N60NTダウンロード（pdfファイル）リンクがあります。 Total 10 pages |
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FCP13N60N / FCPF13N60NT
N-Channel MOSFET
600V, 13A, 0.258Ω
Features
• RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
August 2009
SupreMOSTM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
www.DataVSGheSSet4U.com Gate to Source Voltage
ID Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heak Sink ( Typical)
Thermal Resistance, Junction to Ambient
FCP13N60N FCPF13N60NT
600
±30
13 13*
8.2 8.2*
(Note 1)
39
39
(Note 2)
235
4.3
1.16
100
(Note 3)
20
116 33.8
0.93 0.27
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
FCP13N60N FCPF13N60NT
1.07 3.7
0.5 0.5
62.5 62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
40 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
*Notes:
1. 250μs Pulse Test
3
0.6 1
2. TC = 25oC
10
20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
0.6
0.4
VGS = 10V
0.2 VGS = 20V
www.DataSheet4U.c0o.0m
0
*Notes: TC = 25oC
10 20 30
ID, Drain Current [A]
40
Figure 5. Capacitance Characteristics
50000
10000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Ciss
100 Coss
10
1
0.1
*Notes:
1. VGS = 0V
2. f = 1MHz
Crss
1 10 100
VDS, Drain-Source Voltage [V]
600
Figure 2. Transfer Characteristics
60
10
1
0.2
2
150oC
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
46
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 380V
VDS = 480V
6
4
2
0 *Notes: ID = 6.5A
0 10 20 30 40
Qg, Total Gate Charge [nC]
FCP13N60N / FCPF13N60NT Rev. A
3
www.fairchildsemi.com
3Pages
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FCP13N60N / FCPF13N60NT Rev. A
6
www.fairchildsemi.com
6 Page
合計 : 10 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FCPF13N60NT | N-Channel MOSFET | Fairchild Semiconductor |