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FCA47N60F の電気的特性と機能
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FCA47N60FのメーカーはFairchild Semiconductorです、この部品の機能は「600V N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FCA47N60F |
| 部品説明 600V N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
ロゴ |
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FCA47N60F
600V N-Channel MOSFET, FRFET
SuperFETJanuary 2009
TM
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.062Ω
• Fast Recovery Type ( trr = 240ns)
• Ultra Low Gate Charge (typ. Qg = 210nC)
• Low Effective Output Capacitance (typ. Cosseff. = 420pF)
• 100% avalanche tested
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G DS
TO-3PN
FCA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
www.DataSheet4U.com
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
©2009 Fairchild Semiconductor Corporation
FCA47N60F Rev. A
1
G
S
FCA47N60F
600
47
29.7
141
± 30
1800
47
41.7
50
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ.
--
0.24
--
Max.
0.3
--
41.7
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
102 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
* Notes :
1. 250μs Pulse Test
2. T = 25oC
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
102
101
100
2
150°C
25°C
-55°C
- Note
1. V = 40V
DS
2. 250μs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
0.15
VGS = 10V
0.10
VGS = 20V
0.05
*
Note
:
T
J
=
25°C
0.00
0
20 40 60 80 100 120 140 160 180 200
www.DataSheet4U.com
ID, Drain Current [A]
101
100
0.2
150°C
25°C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-Drain Voltage [V]
1.6
Figure 5. Capacitance Characteristics
25000
20000
15000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10000
Ciss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
5000
0
10-1
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10 V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 47A
D
0
0 50 100 150 200 250
Q , Total Gate Charge [nC]
G
3 www.fairchildsemi.com
FCA47N60F Rev. A
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.DataSheet4U.com
6 www.fairchildsemi.com
FCA47N60F Rev. A
6 Page
合計 : 8 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FCA47N60 | N-Channel MOSFET | Fairchild Semiconductor |
| FCA47N60F | 600V N-Channel MOSFET | Fairchild Semiconductor |
| FCA47N60_F109 | N-Channel MOSFET | Fairchild Semiconductor |