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FCA35N60 の電気的特性と機能
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FCA35N60のメーカーはFairchild Semiconductorです、この部品の機能は「600V N-Channel MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FCA35N60 |
| 部品説明 600V N-Channel MOSFET |
| メーカ Fairchild Semiconductor |
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FCA35N60
600V N-Channel MOSFET
Features
• 650V @ TJ = 150°C
• Typ.RDS(on) = 0.079Ω
• Ultra low gate charge ( Typ. Qg = 139nC )
• Low effective output capacitance ( Typ. Coss.eff = 340pF )
• 100% avalanche tested
March 2009
SuperFETTM
Description
SuperFETTM is Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
ance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
600
±30
35
22.2
105
1455
35
31.25
20
312.5
2.5
-55 to +150
300
Typ.
-
0.24
-
Max.
0.4
-
42
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCA35N60 Rev. A
1
www.fairchildsemi.com
1 Page
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 15.0 V
100 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
0.3
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.24
0.20
0.16
0.12
0.08
www.DataSheet4U.co0.m04
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
25 50 75 100
ID, Drain Current [A]
125
Figure 5. Capacitance Characteristics
50000
10000
Ciss
1000
*Note:
1. VGS = 0V
100 2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1 1
10 100
VDS, Drain-Source Voltage [V]
Coss
Crss
600
Figure 2. Transfer Characteristics
200
100
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
456789
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1
0.2 0.4
2. 250µs Pulse Test
0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 *Note: ID = 35A
0 40 80 120 160
Qg, Total Gate Charge [nC]
FCA35N60 Rev. A
3 www.fairchildsemi.com
3Pages
Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.DataSheet4U.com
FCA35N60 Rev. A
6 www.fairchildsemi.com
6 Page
合計 : 8 ページ |
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| 部品番号 | 部品説明 | メーカ |
| FCA35N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |