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28F256P30B の電気的特性と機能

28F256P30BのメーカーはIntel Corporationです、この部品の機能は「Intel StrataFlash Embedded Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号
28F256P30B
部品説明
Intel StrataFlash Embedded Memory
メーカ
Intel Corporation
ロゴ

Intel Corporation ロゴ 




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28F256P30B Datasheet, 28F256P30B PDF,ピン配置, 機能
www.DataSheet4U.com
Intel StrataFlash® Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
High performance
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
— 25 ns asynchronous-page read mode
• Additional 2048 user-programmable OTP bits
— 4-, 8-, 16-, and continuous-word burst mode
— Selectable OTP Space in Main Array:
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
• 4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Absolute write protection: VPP = VSS
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
— Asymmetrically-blocked architecture
Software
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) program suspend
bottom configuration
— 20 µs (Typ) erase suspend
— 128-KByte main blocks
— Intel® Flash Data Integrator optimized
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
— 64/128/256-Mbit densities in 56-Lead TSOP
package
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
— Minimum 100,000 erase cycles per block
Intel® QUAD+ SCSP
— ETOX™ VIII process technology (130 nm)
— 16-bit wide data bus
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.
Order Number: 306666, Revision: 001
April 2005

1 Page





28F256P30B pdf, ピン配列
1-Gbit P30 Family
Contents
1.0 Introduction ...............................................................................................................................7
1.1 Nomenclature .......................................................................................................................7
1.2 Acronyms ..............................................................................................................................7
1.3 Conventions..........................................................................................................................8
2.0 Functional Overview ..............................................................................................................9
3.0 Package Information ............................................................................................................10
3.1 56-Lead TSOP Package .....................................................................................................10
3.2 64-Ball Easy BGA Package ................................................................................................12
3.3 QUAD+ SCSP Packages....................................................................................................13
4.0 Ballout and Signal Descriptions......................................................................................17
4.1 Signal Ballout......................................................................................................................17
4.2 Signal Descriptions .............................................................................................................20
4.3 SCSP Configurations ..........................................................................................................22
4.4 Memory Maps .....................................................................................................................24
5.0 Maximum Ratings and Operating Conditions ...........................................................29
5.1 Absolute Maximum Ratings ................................................................................................29
5.2 Operating Conditions ..........................................................................................................30
6.0 Electrical Specifications .....................................................................................................31
6.1 DC Current Characteristics .................................................................................................31
6.2 DC Voltage Characteristics.................................................................................................32
7.0 AC Characteristics ................................................................................................................33
7.1
7.2
www.DataSheet4U.com7.3
7.4
7.5
AC Test Conditions.............................................................................................................33
Capacitance ........................................................................................................................34
AC Read Specifications ......................................................................................................35
AC Write Specifications ......................................................................................................41
Program and Erase Characteristics ....................................................................................45
8.0 Power and Reset Specifications .....................................................................................46
8.1 Power Up and Down ...........................................................................................................46
8.2 Reset Specifications ...........................................................................................................46
8.3 Power Supply Decoupling...................................................................................................47
9.0 Device Operations.................................................................................................................48
9.1 Bus Operations ...................................................................................................................48
9.1.1 Reads ....................................................................................................................48
9.1.2 Writes.....................................................................................................................49
9.1.3 Output Disable .......................................................................................................49
9.1.4 Standby..................................................................................................................49
9.1.5 Reset .....................................................................................................................49
9.2 Device Commands .............................................................................................................50
9.3 Command Definitions .........................................................................................................51
Datasheet
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
3


3Pages


28F256P30B 電子部品, 半導体
1-Gbit P30 Family
Revision History
Revision Date
April 2005
Revision
-001
Initial Release
Description
www.DataSheet4U.com
April 2005
6
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet

6 Page

合計 : 70 ページ
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[ 28F256P30B データシート.PDF ]

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部品番号部品説明メーカ
28F256P30B

Intel StrataFlash Embedded Memory

Intel Corporation
Intel Corporation

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