IGW50N60T の電気的特性と機能

IGW50N60TのメーカーはInfineon Technologiesです、この部品の機能は「LOW LOSS IGBT」です。

製品の詳細 ( Datasheet PDF )

部品番号
IGW50N60T

部品説明
LOW LOSS IGBT

メーカ
Infineon Technologies

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IGW50N60T

TRENCHSTOP™ Series

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Features:

 Very low VCE(sat) 1.5V (typ.)

 Maximum Junction Temperature 175°C

 Short circuit withstand time 5s

 Designed for :

- Frequency Converters

- Uninterrupted Power Supply

 TRENCHSTOP™ and Fieldstop technology for 600V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

 Positive temperature coefficient in VCE(sat)

 Low EMI

 Low Gate Charge

 Qualified according to JEDEC1 for target applications

 Pb-free lead plating; RoHS compliant

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

PG-TO247-3

Type

IGW50N60T

VCE

600 V

50 A

VCE(sat),Tj=25°C Tj,max

1.5 V

175 C

Marking

G50T60

Package

PG-TO247-3

Maximum Ratings

Parameter

Collector-emitter voltage, Tj ≥ 25C

DC collector current, limited by Tjmax

TC = 25C, value limited by bondwire

TC = 100C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, VCC  400V, Tj  150C

Power dissipation TC = 25C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

ICpuls

VGE

tSC

Ptot

Tstg

Value

600

150

20

333

-40...+175

-55...+150

260

Unit

s

C

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

Rev. 2.8 19.05.2015

1 Page

IGW50N60T

TRENCHSTOP™ Series

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

td(off)

Eon

Eoff

Ets

Tj=25C,

VCC=400V,IC=50A,

VGE=0/15V,rG=7,

L=103nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Diode from IKW50N60T

min.

Value

Typ.

299

1.2

1.4

2.6

Unit

max.

- ns

- mJ

Switching Characteristic, Inductive Load, at Tj=150 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

td(off)

Eon

Eoff

Ets

Tj=175C,

VCC=400V,IC=50A,

VGE=0/15V,rG=7,

L=103nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Diode from IKW50N60T

min.

Value

Typ.

341

1.8

3.6

Unit

max.

- ns

- mJ

IFAG IPC TD VLS

Rev. 2.8 19.05.2015

3Pages

IGW50N60T

TRENCHSTOP™ Series

td(off)

100ns

td(on)

10ns

20A

40A

60A

80A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, rG = 7Ω,

Dynamic test circuit in Figure E)

100ns

d(on)

10ns



    

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 50A,

Dynamic test circuit in Figure E)

d(off)

100ns

td(on)

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 50A, rG=7Ω,

Dynamic test circuit in Figure E)

max.

typ.

4V min.

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction

temperature

(IC = 0.8mA)

IFAG IPC TD VLS

Rev. 2.8 19.05.2015

6 Page

合計 : 12 ページ

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