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IGW15T120 の電気的特性と機能
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IGW15T120のメーカーはInfineon Technologiesです、この部品の機能は「Low Loss IGBT」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 IGW15T120 |
| 部品説明 Low Loss IGBT |
| メーカ Infineon Technologies |
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このページの下部にプレビューとIGW15T120ダウンロード（pdfファイル）リンクがあります。 Total 12 pages |
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IGW15T120
^ TrenchStop Series
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP313
C
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
IGW25T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
www.DaGtaaSthee-eet4mUi.tctoemr voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4515
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
30
15
45
45
±20
10
110
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
1 Page
IGW15T120
^ TrenchStop Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
TO-247AC
VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
1100
100
50
85
-
90
- pF
-
-
- nC
13 nH
-A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=15A,
VGE=-15/15V,
RG=56Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Value
typ.
50
30
520
60
1.3
1.4
2.7
Unit
max.
- ns
-
-
-
- mJ
-
-
www.DaStawShiteceht4iUn.gcoCmharacteristic, Inductive Load, at Tj=150 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C,
VCC=600V,IC=15A,
VGE=-15/15V,
RG= 56Ω
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Value
typ.
50
35
600
120
2.0
2.1
4.1
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
3Pages
^
td(off)
100ns tf
td(on)
10ns tr
TrenchStop Series
1µs
td(off)
tf
100ns
10ns
IGW15T120
td(on)
tr
1ns
0A
Figure 9.
10A 20A
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56Ω,
Dynamic test circuit in Figure E)
1ns
10Ω
35Ω 60Ω 85Ω
RG, GATE RESISTOR
110Ω
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
td(off)
www.DataSheet4U.com
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.6mA)
Power Semiconductors
6
Preliminary / Rev. 1 Jul-02
6 Page
合計 : 12 ページ |
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| 部品番号 | 部品説明 | メーカ |
| IGW15T120 | Low Loss IGBT | Infineon Technologies |