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IGW03N120H2 の電気的特性と機能
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IGW03N120H2のメーカーはInfineon Technologiesです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 IGW03N120H2 |
| 部品説明 IGBT ( Insulated Gate Bipolar Transistor ) |
| メーカ Infineon Technologies |
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このページの下部にプレビューとIGW03N120H2ダウンロード（pdfファイル）リンクがあります。 Total 13 pages |
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IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Qualified according to JEDEC2 for target applications
PG-TO220-3-1
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
IGW03N120H2
IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking
G03H1202
G03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
±20
62.5
-40...+150
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08
1 Page
IGP03N120H2
IGW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=800V,IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
9.2
5.2
281
29
0.14
0.15
0.29
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82Ω,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
9.4
6.7
340
63
0.22
0.26
0.48
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82Ω,
Cr2)=4nF
Tj=25°C
Tj=150°C
min.
Value
typ.
Unit
max.
mJ
- 0.05 -
- 0.09 -
2)
3)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
3
Rev. 2.6 Febr. 08
3Pages
IGP03N120H2
IGW03N120H2
1000ns
100ns
td(off)
tf
10ns
td(on)
tr
1ns
0A 2A 4A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
1000ns
td(off)
100ns
10ns
tf
td(on)
1ns
0Ω
tr
50Ω
100Ω
150Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
1000ns
td(off)
100ns
tf
10ns
td(on)
tr
1ns
25°C 50°C 75°C 100°C 125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
5V
4V
3V max.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
Power Semiconductors
6
Rev. 2.6 Febr. 08
6 Page
合計 : 13 ページ |
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| 部品番号 | 部品説明 | メーカ |
| IGW03N120H2 | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon Technologies |