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7MBR35SD120 の電気的特性と機能

7MBR35SD120のメーカーはFuji Electricです、この部品の機能は「PIM/Built-in converter」です。


製品の詳細 ( Datasheet PDF )

部品番号
7MBR35SD120
部品説明
PIM/Built-in converter
メーカ
Fuji Electric
ロゴ

Fuji Electric ロゴ 




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7MBR35SD120 Datasheet, 7MBR35SD120 PDF,ピン配置, 機能
7MBR35SD120
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 35A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
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-IC
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Junction temperature (except Thyristor)
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
Condition
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
1200
±20
50
35
100
70
35
240
1200
±20
35
25
70
50
180
1200
1600
1600
35
390
125
1600
35
360
648
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m

1 Page





7MBR35SD120 pdf, ピン配列
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
7MBR35SD120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
80
VGE= 20V 15V 12V
60
10V
40
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
80
Tj= 25°C
Tj= 125°C
60
40
20
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0
0
1234
Collector - Emitter voltage : VCE [ V ]
5
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
1000
Coes
Cres
100
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 70A
Ic= 35A
Ic= 17.5A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0 100 200 300 400
Gate charge : Qg [ nC ]


3Pages


7MBR35SD120 電子部品, 半導体
IGBT Module
7MBR35SD120
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
Tj= 25°C
Tj= 125°C
50
40
30
20
10
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0
0
1234
Collector - Emitter voltage : VCE [ V ]
5
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 50A
Ic= 25A
Ic= 12.5A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0 50 100 150 200 250
Gate charge : Qg [ nC ]

6 Page

合計 : 7 ページ
PDF ダウンロード

[ 7MBR35SD120 データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

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部品番号部品説明メーカ
7MBR35SD120

PIM/Built-in converter

Fuji Electric
Fuji Electric

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