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WV3EG6434S-BD4 の電気的特性と機能
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WV3EG6434S-BD4のメーカーはWhite Electronic Designsです、この部品の機能は「256MB - 32Mx64 DDR SDRAM UNBUFFERED」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 WV3EG6434S-BD4 |
| 部品説明 256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| メーカ White Electronic Designs |
ロゴ |
このページの下部にプレビューとWV3EG6434S-BD4ダウンロード（pdfファイル）リンクがあります。 Total 10 pages |
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White Electronic Designs
WV3EG6434S-BD4
ADVANCED*
256MB – 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
FEATURES
DDR266 and DDR333
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Power supply: 2.5V ± 0.20V
Standard 200 pin SO-DIMM package
• Package height options:
BD4: 31.75mm (1.25")
DESCRIPTION
The WV3EG6434S is a 32Mx64 Double Data Rate
SDRAM memory module based on 256Mb DDR
SDRAM component. The module consists of eight
32Mx8 DDR SDRAMs in BGA package mounted on a
200 Pin FR4 substrate.
Synchronous design allows precise cycle control with
the use of system clock. Data I/O transactions are
possible on both edges and Burst Lenths allow the
same device to be useful for a variety of high bandwidth,
high performance memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• Lead-Free or RoHS Products
• Vendor source control options
• Industrial temperature option
www.DataSheet4U.com
Clock Speed
CL-tRCD-tRP
OPERATING FREQUENCIES
DDR333 @CL=2.5
166MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April 2005
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 Page
White Electronic Designs
WV3EG6434S-BD4
ADVANCED
S0# CKE0
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
www.DataSheet4UD.cMo3m
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
FUNCTIONAL BLOCK DIAGRAM
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S1#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S1#
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S1#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S1#
BA0 - BA1
A0 - A12
RAS#
CAS#
WE#
BA0-BA1: DDR SDRAMs
A0-A12: DDR SDRAMs
RAS#: SDRAMs
CAS#: SDRAMs
WE#: SDRAMs
Serial PD
SCL
WP
A0 A1 A2
SA0 SA1 SA2
SDA
VCCSPD
VCC/VCCQ
SPD
DDR SDRAM
VREF
VSS
DDR SDRAM
DDR SDRAM
NOTE: All resistor values are 22 ohms unless otherwise specified.
CK0
CK0#
PLL
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April 2005
Rev. 0
3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
3Pages
White Electronic Designs
WV3EG6434S-BD4
ADVANCED
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A
IDD1 : OPERATING CURRENT : ONE BANK
IDD7A : OPERATING CURRENT : FOUR BANKS
1. Typical Case : VCC=2.5V, T=25°C
2. Worst Case : VCC=2.7V, T=10°C
3. Only one bank is accessed with tRC (min), Burst
Mode, Address and Control inputs on NOP edge
are changing once per clock cycle. IOUT = 0mA
4. Timing Patterns :
• DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRCD=2*tCK, tRAS=5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the
same timing with random address changing;
50% of data changing at every burst
• DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
• DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2,
BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
• DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4,
tRCD=10*tCK, tRAS=7*tCK
www.DataRSehaedet4: UA.0coNmN R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
1. Typical Case : VCC=2.5V, T=25°C
2. Worst Case : VCC=2.7V, T=10°C
3. Four banks are being interleaved with tRC (min),
Burst Mode, Address and Control inputs on NOP
edge are not changing. Iout=0mA
4. Timing Patterns :
• DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with
Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0
- repeat the same timing with random address
changing; 100% of data changing at every
burst
• DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK
Read with Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
• DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2,
BL=4, tRRD=2*tCK, tRCD=2*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
• DDR333 (166MHz, CL=2.5) : tCK=6ns,
BL=4, tRRD=3*tCK, tRCD=3*tCK, Read with
Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
Legend : A = Activate, R = Read, W = Write, P = Precharge, N = NOP
A (0-3) = Activate Bank 0-3
R (0-3) = Read Bank 0-3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
April 2005
Rev. 0
6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
6 Page
合計 : 10 ページ |
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| 部品番号 | 部品説明 | メーカ |
| WV3EG6434S-BD4 | 256MB - 32Mx64 DDR SDRAM UNBUFFERED | White Electronic Designs |