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WV3EG264M72ESFR-D4 の電気的特性と機能
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WV3EG264M72ESFR-D4のメーカーはWhite Electronic Designsです、この部品の機能は「1GB - 2x64Mx72 DDR SDRAM REGISTERED」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 WV3EG264M72ESFR-D4 |
| 部品説明 1GB - 2x64Mx72 DDR SDRAM REGISTERED |
| メーカ White Electronic Designs |
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White Electronic Designs WV3EG264M72ESFR-D4
ADVANCED*
1GB – 2x64Mx72 DDR SDRAM REGISTERED, w/PLL
FEATURES
200-pin SO-DIMM, dual in-line memory module
Fast data transfer rates: PC2100 and PC2700
Utilizes 266 and 333 Mb/s DDR SDRAM
components
VCC = VCCQ = 2.5V ±0.2V
Bidirectional data strobe (DQS) option
Differential clock inputs (CK and CK#)
DLL to align DQ and DQS transitions with CK
Programmable burst: length (2, 4, 8)
Programmable READ# latency (CL): 2 and 2.5
(clock)
Serial Presence Detect (SPD) with EEPROM
Auto and self refresh: 64ms/ 8,192 cycle refresh
Gold edge contacts
Dual Rank
Package option
• 200 Pin SO-DIMM
• PCB – 31.75mm (1.25") Max
DESCRIPTION
The WV3EG264M72ESFR is a 2x64Mx72 Double Data
Rate DDR SDRAM high density module. This memory
module consists of eighteen 64Mx8 bit with 4 banks DDR
Synchronous DRAMs in FBGA packages, mounted on a
200-pin SO-DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
www.DataSheet4U.com
Clock Speed
CL-tRCD-tRP
OPERATING FREQUENCIES
DDR333@CL = 2.5
166MHz
2.5-3-3
DDR266@CL = 2
133MHz
2-2-2
DDR266@CL = 2.5
133MHz
2.5-3-3
August 2005
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 Page
White Electronic Designs WV3EG264M72ESFR-D4
ADVANCED
FUNCTIONAL BLOCK DIAGRAM
CS1#
CS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
www.DataSheet4U.comDDQQ3301
DQS8
DM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CS0#
CS1#
BA0-BA1
A0-A12
RAS#
CAS#
CKE0
CKE1
WE#
PCK
PCK#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S0#
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
S1#
DM CS# DQS
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
R RCS0#
E RCS1#
G RBA0-RBA1
I RA0-RA12
S RRAS#
T RCAS#
E RCKE0
R RCKE1
RWE#
RESET#
DM CS# DQS
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
SCL
WP
Serial PD
A0 A1 A2
SA1 SA2
CK0
CK0#
120 Ohms
PLL
BA0-BA1: DDR SDRAMs
A0-A12: DDR SDRAMs
RAS#: DDR SDRAMs
CAS#: DDR SDRAMs
CKE: DDR SDRAMs
CKE: DDR SDRAMs
WE#: DDR SDRAMs
VCCSPD
VCCQ/VCC
VREF
VSS
SDA
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
DDR SDRAM X 2
REGISTER X 2
SPD
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
NOTE: All resistor values are 22 ohms unless otherwise specified.
August 2005
Rev. 0
3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
3Pages
White Electronic Designs WV3EG264M72ESFR-D4
ADVANCED
AC TIMING PARAMETERS
0°C ≤ TCASE < +70°C; VCCQ = +2.5V ± 0.2V, VCC = +2.5V ± 0.2V
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS# to CAS# delay
Row precharge time
Row active to Row active
Write recovery time
Last data in to Read command
Col. address to Col. address
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from
Output data access time
Data strobe edge to ouput
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK ris-
DQS falling edge from CK
DQS-in high level width
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DQS-in cycle time
Address and Control Input
Address and Control Input
Address and Control Input
Address and Control Input
Data-out high impedence time from CK/CK#
Data-out low impedence time from CK/CK#
Input Slew Rate (for input)
Input Slew Rate (for I/O pins)
Output Slew Rate (x4,x8)
Output Slew Rate Matching
Symbol
CL=2.0
CL=2.5
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
tCCD
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRE
tWPRE
tDSS
tDSH
tDQSH
tDQSL
tDSC
tIS
tIH
tIS
tIH
tHZ
tLZ
tSL(I)
tSL(IO)
tSL(O)
tSLMR
335
Min Max
60
72
42 70K
18
18
12
15
1
1
7.5 12
6 12
0.45 0.55
0.45 0.55
-0.6 +0.6
-0.7 +0.7
— 0.4
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.9 1.1
0.75
0.75
0.8
0.8
+0.7
-0.7 +0.7
0.5
0.5
1.0 4.5
0.67 1.5
262
Min Max
65
75
45 120K
20
20
15
15
1
1
7.5 12
7.5 12
0.45 0.55
0.45 0.55
-0.75 +0.75
-0.75 +0.75
— 0.5
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.9 1.1
0.9
0.9
1.0
1.0
+0.75
-0.75 +0.75
0.5
0.5
1.0 4.5
0.67 1.5
Note: AC specifications are based on Micron components. Other DRAM manufacturers specificaitons may be different.
265
Min Max
65
75
45 120K
20
20
15
15
1
1
10 12
7.5 12
0.45 0.55
0.45 0.55
-0.75 +0.75
-0.75 +0.75
— 0.5
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.9 1.1
0.9
0.9
1.0
1.0
+0.75
-0.75 +0.75
0.5
0.5
1.0 4.5
0.67 1.5
Unit
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
ns
tCK
tCK
ns
ns
ns
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
V/ns
V/ns
V/ns
August 2005
Rev. 0
6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
6 Page
合計 : 11 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| WV3EG264M72ESFR-D4 | 1GB - 2x64Mx72 DDR SDRAM REGISTERED | White Electronic Designs |