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DPG60C300QB の電気的特性と機能
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DPG60C300QBのメーカーはIXYSです、この部品の機能は「High Performance Fast Recovery Diode」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 DPG60C300QB |
| 部品説明 High Performance Fast Recovery Diode |
| メーカ IXYS |
ロゴ |
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www.DataSheet4U.com
DPG 60 C 300QB
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number (Marking on product)
DPG 60 C 300QB
12
3
VRRM = 300 V
IFAV = 2x 30 A
t rr =
35 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package:
TO-3P
● Industry standard outline
- compatible with TO-247
● Epoxy meets UL 94V-0
● RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
IFSM
IRM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR =
VR =
IF =
IF =
300 V
300 V
30 A
60 A
IF = 30 A
IF = 60 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25 °C
TVJ = 25 °C
TVJ = 150 °C
TVJ = 25 °C
TVJ = 150 °C
TC = 135 °C
TVJ = 175 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 30 A;
-di /dt = 200 A/µs
F
VR = 100 V
VR = 150 V; f = 1 MHz
I AS = 9 A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
300
1
0.1
1.34
1.69
1.06
1.39
30
0.70
10.5
0.95
-55 175
160
300
3
35
40
4
0.9
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
1 Page
www.DataSheet4U.com
DPG 60 C 300QB
80
A
70
60
IF
50
40
30
20
10
TVJ = 150°C
125°C
25°C
700
µC
TVJ = 125°C
600 VR = 200 V
Qr 500
400
IF = 60 A
30 A
15 A
300
200
100
30
A
25
IRM
20
15
TVJ = 125°C
VR = 200 V
IF = 60 A
30 A
15 A
10
5
0
0.0 0.4 0.8 1.2 1.6 V
VF
Fig. 1 Forward current IF vs. VF
0
100 A/µs 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
1.4
1.2
Kf
1.0
VR = 200 V
IF = 30 A
diF/dt = 500 A/µs
100
ns
90
trr 80
70
TVJ = 125°C
VR = 200 V
0.8 60
0.6 IRM
0.4
Qrr
0.2
0
40 80 120 C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
50
40 IF = 60 A
30
30 A
15 A
20
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Typ. recovery time trr vs. -diF/dt
700
ns
600
tfr 500
tfr
400
TVJ = 125°C
VR = 200 V
IF = 30 A
35
V
30
VFR
25
VFR
20
300 15
200 10
100 5
00
0 200 400 600 800 A1/0µ0s0
diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
10
K/W
1
ZthJC
0.1
0.01
Constants for ZthJC calculation:
i Rthi
[K/W]
1 0.505
2 0.195
3 0.250
ti
[s]
0.005
0.0003
0.041
0.001
0.00001 0.0001 0.001
0.01
0.1
DPG60C300QB
1 s 10
t
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
3Pages
合計 : 3 ページ |
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| 部品番号 | 部品説明 | メーカ |
| DPG60C300QB | High Performance Fast Recovery Diode | IXYS |