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A1034 の電気的特性と機能
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A1034のメーカーはPanasonic Semiconductorです、この部品の機能は「PNP Transistor - 2SA1034」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 A1034 |
| 部品説明 PNP Transistor - 2SA1034 |
| メーカ Panasonic Semiconductor |
ロゴ |
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wwwT.DraantasSihseteotr4U.com
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Collector to 2SA1034
base voltage 2SA1035
VCBO
–35
–55
Collector to 2SA1034
emitter voltage 2SA1035
VCEO
–35
–55
Emitter to base voltage
VEBO
–5
Peak collector current
ICP
–100
Collector current IC –50
Collector power dissipation PC
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : F(2SA1034)
H(2SA1035)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SA1034
2SA1035
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–100 nA
–1 µA
–35
V
–55
Collector to emitter 2SA1034
voltage
VCEO
2SA1035
IC = –2mA, IB = 0
–35
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE
fT
Noise voltage
NV
*hFE1 Rank classification
IE = –10µA, IC = 0
–5
V
VCE = –5V, IC = –2mA
180 700
IC = –100mA, IB = –10mA*2
– 0.7 – 0.6
V
VCE = –1V, IC = –100mA*2
200 –1.0
V
VCB = –5V, IE = 2mA, f = 200MHz
MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150 mV
*2 Pulse measurement
Rank
RST
hFE
Marking 2SA1034
Symbol
2SA1035
180 ~ 360
FR
HR
260 ~ 520
FS
HS
360 ~ 700
FT
HT
1
1 Page
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NV — VCE
160
IC=–1mA
140 GV=80dB
Function=FLAT
120
Rg=100kΩ
100
80
60 22kΩ
40
4.7kΩ
20
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
NV — IC
300
VCE=–10V
GV=80dB
Function=RIAA
240
180
120 Rg=100kΩ
22kΩ
60
4.7kΩ
0
– 0.01 – 0.03
– 0.1
– 0.3
–1
Collector current IC (mA)
NV — VCE
300
IC=–1mA
GV=80dB
Function=RIAA
240
Rg=100kΩ
180
120
22kΩ
60
4.7kΩ
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
NV — Rg
160
VCE=–10V
140 GV=80dB
Function=FLAT
120
100
80
60
IC=–1mA
40
– 0.5mA
20
– 0.1mA
0
13
10 30 100
Signal source resistance Rg (kΩ)
2SA1034, 2SA1035
NV — IC
160
VCE=–10V
140 GV=80dB
Function=FLAT
120
100
Rg=100kΩ
80
60
22kΩ
40
4.7kΩ
20
0
– 0.01 – 0.03
– 0.1
– 0.3
–1
Collector current IC (mA)
NV — Rg
300
VCE=–10V
GV=80dB
Function=RIAA
240
180
120
60 IC=–1mA
– 0.5mA
– 0.1mA
0
1 3 10 30 100
Signal source resistance Rg (kΩ)
3
3Pages
合計 : 3 ページ |
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