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P10NK60ZFP の電気的特性と機能
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P10NK60ZFPのメーカーはSTMicroelectronicsです、この部品の機能は「STP10NK60ZFP」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 P10NK60ZFP |
| 部品説明 STP10NK60ZFP |
| メーカ STMicroelectronics |
ロゴ |
このページの下部にプレビューとP10NK60ZFPダウンロード（pdfファイル）リンクがあります。 Total 19 pages |
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www.DataSheet4U.com
STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
ID
10 A
10 A
10 A
10 A
10 A
Pw
115
115
35
115
156
s TYPICAL RDS(on) = 0.65 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
s LIGHTING
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
Internal schematic diagram
July 2005
Rev 1
1/19
www.st.com
19
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
Table 4. Gate-source zener diode
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
Min.
30
1 Absolute maximum ratings
Max Value
9
300
3.5
Unit
A
mJ
mJ
Typ.
Max.
Unit
V
1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
3/19
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2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2.1 Typical characteristics
Figure 1. Safe Operating Area for
TO-220/D²/I²PAK
Figure 2. Thermal Impedanc for
TO-220/D²/I²PAK
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
Figure 5. Safe Operating Area for TO-247
Figure 6. Thermal Impedance for TO-247
6/19
6 Page
合計 : 19 ページ |
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| 部品番号 | 部品説明 | メーカ |
| P10NK60ZFP | STP10NK60ZFP | STMicroelectronics |