![]() |
TLP350 の電気的特性と機能
TLP350のメーカーはToshiba Semiconductorです、この部品の機能は「Inverter」です。 |
|
製品の詳細 ( Datasheet PDF )
部品番号 TLP350 |
部品説明 Inverter |
メーカ Toshiba Semiconductor |
ロゴ![]() |
このページの下部にプレビューとTLP350ダウンロード(pdfファイル)リンクがあります。 Total 6 pages |

No Preview Available ! |

www.DataSheet4U.com
Preliminary
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP350
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
TLP350
Unit: mm
The TOSHIBA TLP350 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP350 is suitable for gate driving circuit of IGBT or power MOS FET..
• Peak output current: IO = ±2.0 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current:ICC = 2 mA (max)
• Power supply voltage: VCC = 15 to 30 V
• Threshold input current : IFLH = 5 mA (max)
• Switching time (tpLH/tpHL) : 500 ns (max)
• Common mode transient immunity: 15 kV/µs
• Isolation voltage: 3750 Vrms
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
JEDEC
―
JEITA
―
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1 8 1: NC
2: Anode
2
7
3: Cathode
4: NC
5: GND
3 6 6: VO (output)
7: NC
4 5 8: VCC
Schematic
IF
2+
VF
3−
ICC 8
(Tr1)
VCC
IO 6
(Tr2)
VO
5
GND
A 0.1 µF bypass capacitor must be connected
between pin 8 and 5. (See Note 6)
1 2003-10-27
1 Page


www.DataSheet4U.com
TLP350
Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Output current
(Note 9)
“H” Level
“L” Level
Output voltage
Supply current
Threshold input current
“H” Level
“L” Level
“H” Level
“L” Level
L→H
Threshold input voltage
Supply voltage
H→L
UVLO thresh hold
Symbol
VF
Test
Circuit
Test Condition
IF = 5 mA, Ta = 25°C
∆VF/∆Ta IF = 5 mA
IR
CT
IOPH1
IOPH2
IOPL1
IOPL2
VOH
VOL
ICCH
ICCL
IFLH
VFHL
VCC
VUVLO+
VUVLO-
VR = 5 V, Ta = 25°C
V = 0 , f = 1 MHz,Ta = 25°C
1
VCC = 30 V
IF = 5 mA
V8-6 = 4.0 V
V8-6 =
2
VCC = 30 V
IF = 0 mA
V6-5 = 2.0 V
V6-5 =
3 VCC 1= +15 V
4 VEE 1= -15 V
IO = −100 mA,
IF = 5 mA
IO = 100 mA,
VF = 0.8 V
5 VCC = 30 V
6 VO open
IF = 10 mA
IF = 0 mA
VCC 1= +15 V
VEE 1= -15 V, VO > 0 V
VCC 1= +15 V
VEE 1= -15 V, VO < 0 V
VO > 2.5 V , IF = 5 mA ,
IO=100 mA
Min Typ.* Max Unit
1.55 1.70 V
−2.0 mV/°C
10
45
−1.0 −1.5
1.0 2.0
µA
pF
A
11
V
1.0
2.0
mA
2.0
5 mA
0.8 V
15 30 V
11.0 13.5 V
9.5 12.0 V
*: All typical values are at Ta = 25°C
Note 9: Duration of IO time ≤ 50 µs
Note 10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
Min. Typ. Max. Unit
V = 0,f = 1MHz
VS = 500 V, Ta = 25°C,
R.H. ≤ 60%
AC,1 minute
AC,1 second,in oil
DC,1 minute,in oil
(Note6)
0.8
1×1012 1014
(Note6)
3750 ―
― 10000
― 10000
―
―
―
―
pF
Ω
Vrms
Vdc
3 2003-10-27
3Pages


www.DataSheet4U.com
TLP350
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EBC
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
6 2003-10-27
6 Page
合計 : 6 ページ |
PDF ダウンロード [ TLP350 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |

|
部品番号 | 部品説明 | メーカ |
TLP350 | Inverter | ![]() Toshiba Semiconductor |
TLP3502 | TOSHIBA Photocoupler GaAs Ired & Photo Triac | ![]() Toshiba Semiconductor |
TLP3502A | GaAs Ired & Photo−Triac | ![]() Toshiba Semiconductor |
TLP3503 | TOSHIBA Photocoupler GaAs IRed & Photo Triac | ![]() Toshiba Semiconductor |