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2SD1692 の電気的特性と機能
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2SD1692のメーカーはNECです、この部品の機能は「NPN SILICON DARLINGTON TRANSISTOR」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 2SD1692 |
| 部品説明 NPN SILICON DARLINGTON TRANSISTOR |
| メーカ NEC |
ロゴ |
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DATA SHEET
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
FEATURES
• High DC current gain due to Darlington connection
• Large current capacity and low VCE(sat)
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT (Ta = 25°C)
PT (Tc = 25°C)
Tj
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
150
100
8.0
±3.0
±5.0
1.3
15
150
−55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
ICBO
ICEO
hFE1**
hFE2**
VCE(sat)**
VBE(sat)**
ton
tstg
tf
IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH
VCB = 100 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 2.0 V, IC = 1.5 A
VCE = 2.0 V, IC = 3.0 A
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A
IB1 = −IB2 = 1.5 mA
RL = 27 Ω, VCC ≅ 40 V
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
4,000 to 12,000
K
8,000 to 20,000
MIN.
100
2,000
1,000
TYP.
MAX.
10
1.0
20,000
0.9 1.2
1.5 2.0
0.5
2.0
1.0
Unit
V
µA
mA
V
V
µs
µs
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16191EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
2002
1 Page
2SD1692
Collector Current IC (A)
Base current
waveform
Collector current
waveform
Data Sheet D16191EJ1V1DS
3
3Pages
合計 : 3 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| 2SD1691 | NPN SILICON POWER TRANSISTOR | NEC |
| 2SD1691 | LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |  Unisonic Technologies |
| 2SD1691 | SILICON POWER TRANSISTOR |  SavantIC |
| 2SD1691T | NPN Silicon Epitaxial Power Transistor |  SEMTECH |