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TIG014TS の電気的特性と機能
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TIG014TSのメーカーはSanyo Semicon Deviceです、この部品の機能は「Light-Controlling Flash Applications」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 TIG014TS |
| 部品説明 Light-Controlling Flash Applications |
| メーカ Sanyo Semicon Device |
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www.DataSheet4U.com
Ordering number : ENN8216
TIG014TS
TIG014TS N-Channel IGBT
Light-Controlling Flash Applications
Features
• Low-saturation voltage.
• 4V drive.
• Enhansment type.
• Built-in Gate-to-Emitter protection diode.
• Mounting Height 1.1mm, Mounting Area 19.2mm2.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Conditions
PW≤1ms
PW≤500µs, duty cycle≤0.5%
Electrical Characteristics at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
IC=5mA, VGE=0
VCE=320V, VGE=0
VGE=±6V, VCE=0
VCE=10V, IC=1mA
IC=150A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
400
±6
±8
150
150
--40 to +150
Unit
V
V
V
A
°C
°C
min
400
Ratings
typ
0.5
4.2
4400
65
60
max
10
±10
1.2
5.8
Unit
V
µA
µA
V
V
pF
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505PJ TS IM TB-00001119 No.8216-1/4
1 Page
www.DataSheet4U.com
TIG014TS
6.0
Tc=75°C
5.5
VCE -- VGE
5.0
4.5 IC=150A
4.0
130A
3.5
3.0 100A
2.5
2.0
1.5
1.0
0
1.0 2.0 3.0 4.0 5.0 6.0
Gate-to-Emitter Voltage, VGE -- V IT07624
VGE(off) -- Tc
1.0
0.9
0.8
0.7
0.6
0.5
0.4 VCE=10V
IC=1mA
0.3
--50 --25
0
25 50 75 100
Case Temperature, Tc -- °C
SW Time -- IC
10
7
5
3 tf
2 td(off)
tr
1.0
7
5
125 150
IT07626
3 RL=1.1Ω
2 TC= 25°C
VGE= 4.0V
td(on)
0.1 RG=30Ω
1.0 2 3 5 7 10
2 3 5 7 100
Collector Current, IC -- A
CM -- ICP
450
23
IT07628
400
350
300
250
200
150
100 VCM=330V
Tc≤70°C
50 VGE=4.2V
0 RG≥42Ω
0 20 40 60 80 100 120
Collector Current(Pulse), ICP -- A
140 160
IT07630
6
VGE=4V
5
4
3
VCE(sat) -- Tc
I C=150A
130A
100A
2
1
0
--50
10000
7
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT07625
Cies, Coes, Cres -- VCE
Cies
1000
7
5
3
2
100
7 Coes
5
3 Cres
2
10
0 2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE -- V IT07627
ICP -- VGE
160
CM=400µF
Tc=25°C
140
Tc=70°C
120
100
80
60
40
20
0
0 12 345 6 78
Gate-to-Emitter Voltage, VGE -- V IT07629
No.8216-3/4
3Pages
合計 : 4 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| TIG014TS | Light-Controlling Flash Applications | Sanyo Semicon Device |