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TIG002SS の電気的特性と機能
TIG002SSのメーカーはSanyo Semicon Deviceです、この部品の機能は「Light-Controlling Strobe Applications」です。 |
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製品の詳細 ( Datasheet PDF )
部品番号 TIG002SS |
部品説明 Light-Controlling Strobe Applications |
メーカ Sanyo Semicon Device |
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www.DataSheet4U.com
Ordering number : ENN7167
Features
• Low-saturation voltage.
• 4V drive.
• Enhansment type.
TIG002SS
N-Channel IGBT
TIG002SS
Light-Controlling Strobe Applications
Package Dimensions
unit : mm
2203
[TIG002SS]
85
1
5.0
4
1 : Emitter
2 : Emitter
3 : Emitter
0.2 4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤500µs, duty cycle≤0.5%
Ratings
400
±6
±8
150
150
--40 to +150
Unit
V
V
V
A
°C
°C
Parameter
Symbol
Conditions
Ratings
min typ
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=5mA, VGE=0
400
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0
Gate-to-Emitter Cutoff Voltage
VGE(off) VCE=10V, IC=1mA
0.5
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
IC=150A, VGE=4V
IC=60A, VGE=2.5V
4.2
2.4
Input Capacitance
Cies
VCE=10V, f=1MHz
3300
Output Capacitance
Coes
VCE=10V, f=1MHz
75
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
40
(Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and emitter.
max
10
±100
1.2
5.5
3.4
Unit
V
µA
nA
V
V
V
pF
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3515 No.7167-1/3
1 Page


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160
CM=240µF
ICP -- VGE
140 Tc=25°C
Tc=70°C
120
TIG002SS
400
350
300
CM -- ICP
VCM=350V
Tc≤70°C
VGE=4V
RG≥30Ω
100 250
80 200
60 150
40 100
20 50
0
0 12 345 6 78
Gate-to-Emitter Voltage, VGE -- V IT04219
0
0 20 40 60 80 100 120 140 160
Collector Current(Pulse), ICP -- A IT04220
The gate series resistance RG must be 30Ω or more to protect the device when it is turned off.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2002. Specifications and information herein are subject
to change without notice.
PS No.7167-3/3
3Pages

合計 : 3 ページ |
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部品番号 | 部品説明 | メーカ |
TIG002SS | Light-Controlling Strobe Applications | ![]() Sanyo Semicon Device |