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7N60A の電気的特性と機能
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7N60AのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 7N60A |
| 部品説明 N-CHANNEL MOSFET |
| メーカ Unisonic Technologies |
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このページの下部にプレビューと7N60Aダウンロード（pdfファイル）リンクがあります。 Total 7 pages |
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UNISONIC TECHNOLOGIES CO., LTD
7N60A
7A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N60A is a high voltage N-Channel enhancement
mode power field effect transistors and is designed to have
minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. This power MOSFET is well suited for
high efficiency switch mode power supply.
FEATURES
* VDS = 600V
* ID = 7A
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60AL-TA3-T
7N60AG-TA3-T
7N60AL-TF1-T
7N60AG-TF1-T
7N60AL-TF3-T
7N60AG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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7N60A
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS VDS = 600V, VGS = 0V
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 3.5A (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=300V, ID =7A, RG =25Ω
(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=300V, ID=7A, VGS=10 V
(Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 7A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS = 0V, IS = 7A,
QRR dIF / dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600 V
10 µA
100 nA
-100 nA
2.0 4.0 V
1.0 1.2 Ω
950 1430 pF
85 130 pF
12 18 pF
16 ns
60 ns
80 ns
65 ns
28 42 nC
5.5 8.3 nC
11 17 nC
1.4 V
7A
28
365
4.23
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N60A
TYPICAL CHARACTERISTICS
Power MOSFET
ON Resistance vs. Drain Current
2.5
Note:
1. Td=25°C
2.0 2. Pulsed test
VGS=10V
1.5
VGS=20V
1.0
0.8
0
0 5 10 15 20 25
Drain Current, ID (A)
10000
Capacitance vs. Drain Source Voltage
1000
CISS
100 COSS
10
Note:
1. VGS: 0V
2. f = 1MHz
1 3. TC = 25°C
CRSS
0.1 1 10 100
Drain Source Voltage, VDS (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Reverse Drain Current vs.
Source Drain Voltage
Note:
1. VDS=10V
2. Pulse test
101
100
10-1
0.4
0.6 0.8 1.0 8 1.2
Source Drain Voltage, VSD (V)
1.4
Gate Source Voltage vs. Total Gate Charge
Note:
1. ID = 7A
10 2. TC = 25°C
VDD = 80V
VDD = 200V
VDD = 300V
5
0
5 10 15 20 25 30 35
Total Gate Charge, QG (nC)
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合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| 7N60 | N-CHANNEL MOSFET |  CHONGQING PINGYANG |
| 7N60 | N-Channel Power MOSFET / Transistor |  nELL |
| 7N60 | N-Channel Power MOSFET / Transistor |  yecheng technology |
| 7N60 | N-CHANNEL MOSFET | Unisonic Technologies |