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C5298 の電気的特性と機能
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C5298のメーカーはSanyo Semicon Deviceです、この部品の機能は「NPN Transistor - 2SC5298」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 C5298 |
| 部品説明 NPN Transistor - 2SC5298 |
| メーカ Sanyo Semicon Device |
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www.DataSheet4U.com
Ordering number : EN5292
NPN Triple Diffused Planar Silicon Transistor
2SC5298
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High Speed : tf=100ns typ.
• High Breakdown voltage : VCBO=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
Package Dimensions
unit: mm
2039C-TO3PML
[2SC5298]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=8A, IB=2A
IC=8A, IB=2A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=6A, IB1=1.2A, IB2=–2.4A
IC=6A, IB1=1.2A, IB2=–2.4A
1 : Base
2 : Collector
3 : Emitter
SANYO: TO3PML
Ratings
1500
800
6
10
25
3.0
70
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
Unit
min typ max
10 µA
1.0 mA
800 V
40 130 mA
5V
1.5 V
15 25
47
3.0 µs
0.1 0.2 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0587 No.5292-1/3
1 Page
www.DataSheet4U.com
2SC5298
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of January, 1997. Specifications and information herein are subject
to change without notice.
No.5292-3/3
3Pages
合計 : 3 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| C5291 | NPN Transistor - 2SC5291 | Sanyo Semicon Device |
| C5294 | NPN Transistor - 2SC5294 |  Panasonic Semiconductor |
| C5296 | 800V, 8A, NPN Transistor - 2SC5296 | Sanyo Semicon Device |
| C5296 | 8A, 800V, NPN Power Transistor |  Inchange Semiconductor |